MCQs on Tunnel Diode

MCQs on Tunnel Diode

Q1: The tunnel diode is mainly used

1. For very high speed of switching
2. To control the power
3. For rectification
4. For fact chopping

Answer: (a) For very high speed of switching

Q2: The Tunnel diode is best suited for

1. Amplitude limiters
2. Amplifiers
3. Oscillators
4. Rectifiers

Answer: (b) Amplifiers

Q3: The tunnelling phenomenon is also known as

1. Bulk semiconductor phenomenon
2. Auto electronic phenomenon
3. Auto electric phenomenon
4. Esaki phenomena

Answer: (b) Auto electronic phenomenon

Q4: Tunnel diode operates very fast in the ………. region.

1. Gamma frequency region
2. Microwave frequency region
3. Radiofrequency region
4. Ultraviolet frequency region

Answer: (b) Microwave frequency region

Q5: From the following statements pick the correct statement about tunnel diode

Statement 1: It uses the property of negative conductance

Statement 2: In forward bias the fermilevel of p side becomes higher than the n side It operates at high frequency

1. 1 only
2. 1 and 3
3. 3 only
4. 2 and 3

Answer: (b) 1 and 3

Q6: Which among the following is the reason for the depletion layer of the tunnel diode to be very small?

1. Dopants are high and it is abrupt
2. It’s used at very high-frequency ranges
3. Uses positive conductance property
4. Tunneling effect

Answer: (a) Dopants are high and it is abrupt

Q7: The tunnelling involves

1. Acceleration of electron in p side
2. Movement of electrons from the n-side of the conduction band to the p-side of the valance band
3. Charge distribution management in both the bands
4. Positive slope characteristic of the diode

Answer: (b) Movement of electrons from the n-side of the conduction band to the p-side of the valance band

Q8: What are the materials used to make the Tunnel diode?

1. AlGaAs
2. AlGaInP
3. ZnTe
4. Silicon and germanium materials

Answer: (d) Silicon and germanium materials

Q9: In the construction of tunnel diode, why is the pellet soldered to anode contact and a tiny dot to the cathode contact via a mesh screen?

1. For better conduction and reduce inductance respectively
2. For better conduction and reduce inductance respectively
3. For heat dissipation and increase conduction respectively
4. For heat dissipation and reduce induction respectively

Answer: (d) For heat dissipation and reduce induction respectively

Q10: For a tunnel diode, when p is the probability that the carrier crosses the barrier ‘W’ is the width ‘e’ is energy

1. p ∝ 1/e^(-A*e*w)
2. p ∝ e^(-A*e*w)
3. p ∝ 1/e^(A*e*w)
4. p ∝ e^(A*e*w)

Answer: (b) p ∝ e^(-A*e*w)